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  savantic semiconductor product specification silicon npn power transistors 2sC1626 d escription with to-220c package complement to type 2sa816 applications designed for the driver stages of 30-50w high-fidelity amplifiers and medium speed switching up to 2a peak current pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 80 v v ceo collector-emitter voltage open base 80 v v ebo emitter-base voltage open collector 5 v i c collector current 750 ma i cm collector current-peak 2 a t a =25 1.5 p t total power dissipation t c =25 10 w t j junction temperature 150  t stg storage temperature -50~150  fig.1 simplified outline (to-220) and symbol free datasheet http://
savantic semiconductor product specification 2 silicon npn power transistors 2sC1626 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =10ma ; i b =0 80 v v (br)cbo collector-base breakdown voltage i c =0.1ma ; i e =0 80 v v cesat collector-emitter saturation voltage i c =500ma; i b =50ma 0.5 v v be base-emitter on voltage i c =500m a ; v ce =2v 1.0 v i cbo collector cut-off current v cb =30v ;i e =0 0.5 a i ebo emitter cut-off current v eb =5v; i c =0 1 a h fe-1 dc current gain i c =150m a ; v ce =2v 70 240 h fe-2 dc current gain i c =500m a ; v ce =2v 40 f t transition frequency i c =150m a ; v ce =2v 50 mhz c ob collector output capacitance i e =0;f=1mhz ; v cb =10v 13 pf  h fe-1 classifications o y 70-140 120-240 free datasheet http://
savantic semiconductor product specification 3 silicon npn power transistors 2sC1626 package outline fig.2 outline dimensions (unindicated tolerance:0.10 mm) free datasheet http://


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